提出了一种适用于GaSb/AlGaAsSb器件工艺的由氢氟酸、酒石酸和双氧水构成的氢氟酸系腐蚀液。该腐蚀液对于GaSb和AlGaAsSb材料具有良好的腐蚀特性和稳定的刻蚀速率。选用合适的溶液组份可以得到较低的刻蚀速率，有利于在器件工艺中进行精确控制。实验中发现该腐蚀液对AlGaAsSb的腐蚀速率与其Al组份呈抛物线关系，在合适的Al组份下可对AlGaAsSb和GaSb两种材料进行非选择性的刻蚀。
A new etchant consists of hydrofluoric acid, peroxide and tartaric acid for the chemical etching of GaSb/AlGaAsSb materials has been studied. Results show that this etchant has a stable etching rate to both GaSb and AlGaAsSb compound materials; under suitable solution composition quite low etching rate could be obtained, which are useful for the fabrication of GaSb/AlGaAsSb devices. Parabolic relation between the etching rate of AlGaAsSb materials and their Al content was found, unselective etching could be performed for GaSb and AlGaAsSb material with certain Al content.
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