Bi2Ti2O7薄膜制备及 Bi2Ti2O7绝缘栅场效应管研制

功能材料与器件学报 , 2001, 7(2): 171-174. doi: 10.3969/j.issn.1007-4252.2001.02.013

Bi2Ti2O7薄膜制备及 Bi2Ti2O7绝缘栅场效应管研制

肖卓炳 ^1, , 吴显明 ^2, , 王少伟 ^3, , 王弘 ^4, , 王卓 ^5, , 尚淑霞 ^6, , 王民 ^7,

1.吉首大学生化学院 ,

2.吉首大学生化学院 ,

3.山东大学

4.山东大学

5.山东大学

6.山东大学

7.山东大学

关键词：化学溶液沉积法 , Bi2Ti2O7薄膜 , 介电常数 , 绝缘栅场效应管

Preparation of Bi2Ti2O7 thin film and its application in insulation gate field effect transistor

采用化学溶液沉积法，以硝酸铋和钛酸四丁酯为原料成功地制备了 Bi2Ti2O7介质膜。制膜过程简单，成本低廉，得到的薄膜具有良好的绝缘性和较高的介电常数，用其制备的绝缘栅场效应管与相同尺寸的 SiO2绝缘栅场效应管相比，具有较高的跨导和较低的开启电压。

The Bi2Ti2O7 thin film with strong (111) orientation was successfully prepared by chemical solution deposition (CSD) technique on n－ Si (100) using bismuth nitrate and titanium butoxide as starting materials.The film was crack free and dense with smooth surface. The film presents very good insulating property and has relatively high dielectric constant. Its application in insulation gate field effect transistor can greatly increase the transconductance and lower the cut－ in voltage of metal－ oxide semiconductor field effect transistor.

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