氢和硼离子轰击可消除(001)面多晶金刚石膜的空位缺陷

功能材料与器件学报 , 2001, 7(3): 217-221. doi: 10.3969/j.issn.1007-4252.2001.03.001

氢和硼离子轰击可消除(001)面多晶金刚石膜的空位缺陷

夏义本 ^1, , 史伟民 ^2, , 王林军 ^3, , 居建华 ^4, , 八百隆文 ^5,

1.上海大学材料科学与工程学院,

2.上海大学材料科学与工程学院,

3.上海大学材料科学与工程学院,

4.上海大学材料科学与工程学院,

5.东北大学材料研究所,

关键词：穿透效应 , 轰击 , 阴极发光

Vacancy defects of (001) polycrystalline diamond films eliminated by hydrogen and boron ions bombardment

在微波等离子体化学气相沉积金刚石膜时，采用负偏压使氢和硼离子轰击金刚石膜表面。发现单纯的氢离子的轰击会导致表面刻蚀，可使(001)面颗粒尺寸增大。用扫描电镜（SEM）和阴极发射光谱（CL）分析了硼离子掺杂后[001]取向的金刚石膜表面，发现CL中A峰消失，表明薄膜中位错密度降低。首次发现CL谱中741.5nm峰和575nm到625nm宽峰明显下降，表明在金刚石膜中,中性空位和氮空位缺陷基本消失,利用小原子穿透理论解释了这个现象。

The hydrogen and boron ion bombardments were performed by applying a negative bias voltage to the substrate during microwave plasma chemical vapor deposition process. The size of (001) faces increased after hydrogen ions etching while other grains were etched off by using only hydrogen as reactant gas. The [001]－oriented films after boron doping were investigated by scanning electron microscopy (SEM) and cathodoluminescent (CL) spectra. The absence of the band－A emission in the CL spectra means a low density of dislocation in the films. It is the first time to indicate that the peak at 741.5nm and the broad peak at around 575nm and 625nm in the CL spectra are reduced efficiently after boron doping in (001) polycrystalline diamond films. These phenomena should be explained in simple terms with a penetrating or being adsorbed by the lattice nets of [001]－oriented film model.

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