用热丝CVD的方法在3英寸的硅衬底上生长均匀的金刚石薄膜，应用了在热丝上方加石 墨电极，在形核阶段相对于热丝施加一直流负偏压的预处理方法，使金刚石的成核密度达到1010－ 1011/cm2。在3英寸镜面抛光的硅衬底上制备了平整的金刚石薄膜,生长的薄膜用SEM及喇曼光 谱进行了测试。实验发现电极的位置是影响金刚石薄膜均匀性的重要因素。
Uniform diamond thin films with 3″ diameter were grown by hot filament chemical vapor deposition (HFCVD). Graphite electrodes which were located above the filament were applied, and negative bias relative to the filament were also applied during the nucleation stages. In such case, the diamond nucleation density can reach 1010～ 1011/cm2. A very uniform diamond film was grown on the mirror－polished 3″ Si wafer. The grown films were characterized by SEM and Raman spec－ troscopy. The position of electrodes are found to be the very important factor that effect the diamond growth uniformly.
参考文献
| [1] | YUGO S;KIMURA T;MUTO T .[J].Applied Physics Letters,1991,58:1036. |
| [2] | CHEN Qi-jin;LIN Zhang-da .[J].Applied Physics Letters,1996,68:2450. |
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