研究了p－型异质外延和同质外延金刚石膜的在不同温度和磁场下的磁阻，磁阻器件的结 构为条形和圆盘形。实验结果表明磁阻强烈依赖于磁场、温度和样品的几何形状，圆盘结构的磁 阻大于条形结构，条形结构的磁阻还取决于不同的长－宽比。利用F－S薄膜理论,计算磁场为 5T时条形和圆盘结构的磁阻分别为0.38和0.74，讨论了霍耳效应对磁阻的影响，给出了形状 效应的可能机制。
The magnetoresistive effects were investigated at different temperature and magnetic filed B in both homoepitaxial and heteroepitaxial p－type semiconducting diamond thin films. There are two kinds of device structure used i.e. strip and Corbino disk. Experimental results show that the changes of resistance in the film strongly depend on the magnetic field B, temperature and the geometric form of samples. The magnetoresistance of disk structure is greater than that of strip sample, and the effects of strip sample increase with the ratio of width－to－length. Based on the Fuchs and Sondheimer thin film theory (F－S theory), the magnetoresistances of strip and disk are calculated at magnetic field of 5 T. It is 0.38 for strip and 0.74 for disk. The influence of Hall effect on the magnetoresistance is discussed and a possible mechanism of geometric form effect is described.
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