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用微波等离子体化学气相沉积法(MPCVD)在氧化铝陶瓷衬底上成功地制备出具有[100] 织构的金刚石薄膜,并对该薄膜进行了X射线衍射(XRD)、扫描电子显微镜(SEM)和Raman光 谱分析。由于氦原子具有高的电离能,因此本工作在反应气氛中引入了少量的氦,以提高氢等离 子体的刻蚀效率。实验结果表明,少量氦气的引入促进了等离子体对非(100)面的选择性刻蚀, 从而也有利于金刚石薄膜的[100]织构生长。

[100]-textured diamond films were deposited on alumina ceramic substrates by microwave plasma chemical vapor deposition (MPCVD). The effects of the deposition condition on texture were also investigated based on the results of scanning electron microscopies (SEM), X-ray diffraction spectra (XRD) and Raman scattering spectra. Because of its higher ionization energy, a small portion of helium was introduced into the general post-growth etching process to improve the etching effi- ciency. According to the results from the etching experiments performed on [100] and [111]- textured diamond films respectively, the selective etching of non-[100]-oriented grains by hydro- gen plasma with helium addition is observed and it could be used to shorten the etching time and improve the [100] texture of the diamond films.

参考文献

[1] Mo YW.;Huang XQ.;Wang H.;Xia YB. .DIELECTRIC PROPERTIES OF DIAMOND FILM ALUMINA COMPOSITES[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):266-269.
[2] Kim SH.;Yun WS.;Lee JW.;Park YS. .ENHANCEMENT OF DIAMOND FILM UNIFORMITY IN A BIASED MICROWAVE-PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEM[J].Journal of Crystal Growth,1997(2):198-205.
[3] Xia Y B et al.Nucleation Mechanism of Diamond Film Deposited on Alumina Substrate by Microwave Plasma CVD[J].Journal of Crystal Growth,1998,191:459-465.
[4] Zhang W J;JIANG X .The Contribution of H+ Ions during The Initial Deposition Stage to The Orientation Grade of Diamond Films[J].THIN SOLID FILMS,1998,348:84-89.
[5] Zeng H S.Technology of plasma process[M].北京:清华大学出版社,1990
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