采用微波等离子体化学气相沉积(MPCVD)法成功地在多孔硅上沉积出均匀、致密的金刚 石膜。光致发光测量表明,金刚石膜可以有效稳定多孔硅的发光波长和发光强度,具有明显的钝 化效应。金刚石膜的这个特点再加上高硬度特性使金刚石膜成为多孔硅的一种潜在的钝化膜。
In this paper homogenous and dense diamond films with good crystalline quality were suc- cessfully deposited on porous silicon(PS) surfaces by the microwave plasma assisted chemical vapor deposition(MPCVD) method.Photoluminescence measurements show that the CVD diamond film- coated porous silicon has a weak shift of emission peak wavelength as compared with the stored porous silicon without a diamond film, and its PL peak intensity almost does not change with time. It means the diamond film can efficiently stabilize the porous silicon and provide a passivation effect. In addi- tion,due to its well-known high hardness,the CVD diamond film can improve the mechanical strength of PS surface, therefore it is a promising candidate for passivation of porous silicon in the future.
参考文献
[1] | CANBAM L T .Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers[J].Applied Physics Letters,1990,57:1046-1048. |
[2] | TISCHER M A;COLLINS R T;STABIS J H et al.Luminescence degradation in porous silicon[J].Applied Physics Letters,1992,60:639-641. |
[3] | HDDJ Zoubir N;DELATOUR T;BURNEAU A et al.Interpretation of the luminescence aquenching in chemically etched porous silicon by the desorption of SiH3 species[J].Applied Physics Letters,1994,65:82-84. |
[4] | Muller F;HERINO R;LIGEON M et al.Surface passivation:a critical parameter for the visible luminescence of electroxidised porous silicon[J].Journal of Luminescence,1993,57:111-115. |
[5] | Prokes SM.;Carlos WE. .OXYGEN DEFECT CENTER RED ROOM TEMPERATURE PHOTOLUMINESCENCE FROM FRESHLY ETCHED AND OXIDIZED POROUS SILICON[J].Journal of Applied Physics,1995(4):2671-2674. |
[6] | GARDELIS S;HAMILTON B .The effect of surface modification on the luminescence of porous silicon[J].Journal of Applied Physics,1994,76:5327-5333. |
[7] | KALISH R .Ion- implantation in diamond and diamond films:doping,damage effects and their application[J].Applied Surface Science,1997,117-118:558-569. |
[8] | Gildenblat G.S.;Grot S.A. .The electrical properties and device applications of homoepitaxial and polycrystalline diamond films[J].Proceedings of the IEEE,1991(5):647-668. |
[9] | Lin V S Y;MOTESHAREI K;DANCIL K P S et al.A porous silicon- based optical interferometric biosensor[J].Science,1997,278:840-843. |
- 下载量()
- 访问量()
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%