同质外延CVD金刚石膜的室温边发射

功能材料与器件学报 , 2001, 7(3): 281-283. doi: 10.3969/j.issn.1007-4252.2001.03.015

同质外延CVD金刚石膜的室温边发射

王春蕾 ^1, , 入江正丈 ^2, , 伊藤利道 ^3,

1.大阪大学工学部电气工学科,吹田市山田丘 2- 1,

2.大阪大学工学部电气工学科,吹田市山田丘 2- 1,

3.大阪大学工学部电气工学科,吹田市山田丘 2- 1,

基金项目: “Research for the Future” program(96R15401)

关键词：同质外延金刚石膜 , 阴极荧光法(CL) , 边发射

Room temperature edge emission from homoepitaxial CVD diamond films

利用高功率微波等离子体化学气相沉积方法及合适的预处理方法成功地合成了无生长丘的高品质金刚石膜。阴极荧光（CL）结果表明在本工作的同质外延金刚石膜中，边发射在室温下也是主峰之一。详细研究了室温下有异常粒子和无异常粒子的样品的CL谱和CL扫描图。发现边发射主要产生于无异常粒子区域,而大多数异常粒子主要对位于425nm的BandA发射起作用。因此抑制异常粒子的形成对提高同质外延金刚石膜的质量非常重要。

In this study, edge emission of homoepitaxial CVD diamond was observed as one of the main peaks in CL spectra even at room temperature. In order to study room temperature edge emission charac－ teristics of high quality homoepitaxial diamond, CL spectra and CL images were investigated at room temperature in details for samples with and without abnormal particles. The edge emission mainly comes from the homoepitaxial diamond areas without abnormal particles. Most abnormal particles are found to induce well－known band A emission at 425nm. Suppressing the formation of abnormal particles is very important to improve the quality of homoepitaxial diamond.

参考文献

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