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采用一种改进的热丝CVD系统沉积金刚石膜。在传统热丝CVD腔中设置一套红外线发 生器,中心波长3.5μm,处于氢与甲烷分子拉伸振动吸收峰位置。由于共振吸收能量使反应气 体分解加强,在反应区获得较高浓度的原子氢和活性碳氢基团,使金刚石膜的生长速率和品质 得到了提高。

An improved hot-filament CVD system was developed to deposit diamond films. An infrared generator in the hot-filament CVD chamber was designed with the main wavelength 3.5 μ m, which was right situated in the stretch vibration absorption peak of the C-H bond in methane molecule and H-H bond in hydrogen molecule. The decomposition of precursor gas is enhanced due to resonance absorption of energy, so high densities of hydrogen atom and active hydrocarbon cluster are obtained near the sub- strate surface. Therefore, higher growth rate (13 μ m/h) and high quality diamond film are achieved.

参考文献

[1] CHEN Qi- jin;WANG Li- xin;ZHANG ZE et al.Epitaxially oriented growth of diamond on silicon by hot filament chemical vapor deposition[J].Applied Physics Letters,1996,68(02):8.
[2] Yu Jie;HUANG Rong- fang;WEN Li- shi et al.Enhancement of the HFCVD diamond growth process by derected gas flow[J].Materials Letters,1997,32:143-146.
[3] CHEN Jian- guo;CHENG Yu- hang;WU Yi- ping et al.A rfdirect current plasmaenhanced CVD instrument (Chinese)[J].Vacuum and Cryogenics,1998,4(01):30-34.
[4] Gu Changzhi .Electron emission from diamond thin films deposited by microwave plasma-chemical vapor deposition method[J].Diamond and Related Materials,2000(9-10Sep/Oct):1604-1607.
[5] LU Qin- gao;WU Qin- chong;YU Shi- ji et al.New microwave plasma CVD set up for diamond film growth (Chinese)[J].Vacuum and Cryogenics,1998,4(01):35-37.
[6] Lu F.X. .Economical deposition of a large area of high quality diamond film by a high power DC arc plasma jet operating in a gas recycling mode[J].Diamond and Related Materials,2000(9-10Sep/Oct):1655-1659.
[7] Zhongxixianger;SOLOMON P H.Infrared absorption spectrogram[M].inner publication of Chemical Association of China 1980,1980
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