系统压强对微波等离子体化学气相沉积金刚石成核的影响

功能材料与器件学报 , 2001, 7(3): 326-329. doi: 10.3969/j.issn.1007-4252.2001.03.026

系统压强对微波等离子体化学气相沉积金刚石成核的影响

王志明 ^1, , 夏义本 ^2, , 杨莹 ^3, , 方志军 ^4, , 王林军 ^5, , 居建华 ^6, , 张伟丽 ^7, , 范轶敏 ^8,

1.上海大学材料科学与工程学院,

2.上海大学材料科学与工程学院,

3.上海大学材料科学与工程学院,

4.上海大学材料科学与工程学院,

5.上海大学材料科学与工程学院,

6.上海大学材料科学与工程学院,

7.上海大学材料科学与工程学院,

8.上海大学材料科学与工程学院,

关键词： MPCVD , 金刚石膜 , 氧化铝 , 气体压力 , 成核密度

Influence of pressure on nucleation of diamond by microwave plasma enhanced chemical vapor deposition synthesis

为了在氧化铝上制备(100)定向织构的金刚石薄膜，必须先提高金刚石的成核密度。在微波等离子体化学气相沉积（MPCVD）系统中，采用低压成核的方法，在氧化铝陶瓷上沉积出高成核密度的金刚石薄膜。扫描电镜显示其成核密度可达108cm－2。在此基础上，沉积出（100）织构的金刚石薄膜。

In order to grow diamond film on alumina ceramic, it is essential to control the diamond nucleation properly. Under gas pressure lower than that used for growth, the high density nucleation of diamond films on alumina was successfully achieved by microwave plasma－enhanced chemical vapor deposition (MPCVD). Observation of SEM demonstrated that the nuclear density could be as high as 108/cm2. Based on this, [100]－textured diamond film was successfully deposited on alumina ceramic.

参考文献

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[3]	Jiang X. .High quality heteroepitaxial diamond films on silicon: recent progresses[J].Diamond and Related Materials,2000(9-10Sep/Oct):1640-1645.
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