垂直梯度凝固法生长半绝缘GaAs单晶的工艺研究

1.中国科学院上海冶金研究所,上海,200050

2.中国科学院上海冶金研究所,上海,200050

3.中国科学院上海冶金研究所,上海,200050

A study on vertical gradient freeze technique of semi-insulating GaAs crystals

在国产三温区VGF单晶炉上,研究了非掺GaAs半绝缘单晶的液封垂直梯度凝固法生长技术.讨论了引晶、坩埚设计与质量、PBN坩埚的剥落、B2O3的水份控制等因素对单晶生长的影响,基本解决了VGF的工艺问题.通过多炉生长,得到了Φ2″=VGF非掺半绝缘低位错全单晶.

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