用磁控溅射和离子束溅射共沉积的方法,分别以TiN、TaN、ZrN为扩散阻挡层,在单晶硅片上制备了Cu-Zr合金膜,膜在400oC氮气中退火1h.研究表明,不同扩散阻挡层上Cu-Zr膜的形貌不同,沉积态膜的组成颗粒以ZrN为扩散阻挡层的最小,退火后膜的颗粒长大,且Zr向膜表面和界面处扩散.沉积态的膜具有强的(111)取向,峰形宽化明显,退火后又出现(200)、(220)、(311)衍射峰,扩散阻挡层不同时Cu-Zr合金膜的(200)与(111)的强度比值不同.
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