通过理论分析计算、计算机模拟和工艺实验,对Si/SiGe异质结双极晶体管(HBT)的结构参数进行了精细的优化设计,特别是采用了本征间隔层和新颖的Ge分布曲线,有效地削弱了基区杂质外扩散、基区复合和异质结势垒效应的不利影响.开发了兼容于硅工艺的锗硅HBT工艺,并据此试制出了Si/SiGeHBT,测量结果表明,器件的直流和交流特性均较好,电流放大系数为50,截止频率fT为5.1GHz.
Through computer aided simulation and processing experiment, the structure parameters of Si/SiGe HBT were optimized carefully. An intrinsic space layer and a novel Ge fraction profile are used to reduce the influence of boron outdiffusion, base recombination and HBE. A SiGe HBT process compatible with conventional Si processes is developed, by which the SiGe HBT is fabricated successfully. The results of test indicated that the current gain β is 50 and the cut- off frequency f T is 5.1 GHz.
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