报道了在射频等离子体(RF-Plasma)辅助的分子束外延(MBE)技术中,使用白宝石(0001)衬底,采用低温缓冲层工艺外延氮化镓(GaN).通过原子力显微镜(AFM)的表面形貌比较及X射线双晶衍射(XRD)ω扫描摇摆曲线的分析,讨论了低温缓冲层成核机理及缓冲层生长温度与形成准二维生长的关系,确立了缓冲层的三维成核、准二维生长的生长机理,并在此基础上实现了氮化镓外延层更好地二维生长,进一步提高了氮化镓外延层的晶体质量.
参考文献
[1] | Christian Heinlein;Jostein K Grepstad;Sven Einfeldt et al.Preconditioning of c- plane sapphire for GaN molecular beam epitaxy by electron cyclotron resonance plasma nitridation[J].Journal of Applied Physics,1998,83:6023. |
[2] | Tarsa EJ.;Wu XH.;Fini P.;Denbaars SP.;Speck JS.;Heying B. .HOMOEPITAXIAL GROWTH OF GAN UNDER GA-STABLE AND N-STABLE CONDITIONS BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY[J].Journal of Applied Physics,1997(11):5472-5479. |
[3] | Kazumasa Hiramatsu;Theeradetch Detchprohm;Isamu Akasaki .Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy[J].Japanese Journal of Applied Physics,1993,32(04):1528. |
[4] | Amano H;Sawasaki N;Akasaki I et al.Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer[J].Applied Physics Letters,1986,48:353. |
[5] | Kim C;Robinson I K;Myoung J;Shim K et al.Critical thickness of GaN thin films on sapphire (0001)[J].Applied Physics Letters,1996,69:2358. |
[6] | Weyher JL.;Grzegory I.;Porowski S.;Muller S. .CHEMICAL POLISHING OF BULK AND EPITAXIAL GAN[J].Journal of Crystal Growth,1997(1/2):17-22. |
[7] | Bean J C;Felman L C;Fiory A T et al.GexSi1- x/Si strained- layer superlattice grown by molecular beam epitaxy[J].Journal of Vacuum Science and Technology,1984,A2:436. |
[8] | Van Delft F C M J;Van Langeveld A D;Nieuwenhuys B E .Determination of nucleation and growth mechanisms[J].THIN SOLID FILMS,1985,123:333. |
[9] | Ourmazd A .Semiconductor interfaces: abruptness, smoothness, and optical properties[J].Journal of Crystal Growth,1989,98:72. |
[10] | Mallard R E;Long N J;Booker G R et al.Electron microscope studies of interdiffusion in molecular beam epitaxy grown GaInAs/AlInAs multilayers[J].Journal of Applied Physics,1991,70:182. |
[11] | Leszczynski M;Walker J F .Thermal expansion of gallium arsenide layers grown by molecular beam epitaxy at low temperatures[J].Applied Physics Letters,1993,62:1484. |
[12] | Leszczynski M;Suski T;Teisseyre H et al.Thermal expansion of gallium nitride[J].Journal of Applied Physics,1994,76:4909. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%