制备AlN薄膜为绝缘埋层的新型SOI材料

功能材料与器件学报 , 2002, 8(4): 331-334. doi: 10.3969/j.issn.1007-4252.2002.04.001

制备AlN薄膜为绝缘埋层的新型SOI材料

门传玲 ^1, , 徐政 ^2, , 安正华 ^3, , 张苗 ^4, , 林成鲁 ^5,

1.同济大学材料学院微电子所,上海,200092;中科院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海,200050

2.同济大学材料学院微电子所,上海,200092

3.中科院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海,200050

4.中科院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海,200050

5.中科院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海,200050

基金项目: 国家自然科学基金(69976034,90101012) 国家重点基础研究发展计划(973计划)(G20000365)

关键词： AlN薄膜 , 键合 , SOI , 离子束增强沉积

Fabrication of a novel SOI-structure with AlN film as buried insulator

采用离子束增强技术(IBED)在100mm硅片上合成了AlN薄膜.以速率0.05nm/s蒸发高纯Al得到AlN样品,XPS结果证实了成功合成了AlN薄膜,其N/Al比为0.618:1,扩展电阻结果表明其绝缘性能良好,原子力显微镜(AFM)显示其表面平整光滑,均方根粗糙度(RMS)为0.13nm,满足键合需要.利用智能剥离技术(Smart-cutprocess)成功地制备了以AlN薄膜为埋层的SOI(silicon-on-insulator)材料.剖面透射电镜照片(XTEM)给出了此SOI结构,高分辨TEM实验结果表明上层硅具有与衬底硅相似的结晶质量可满足器件制造的要求.

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