对宽禁带半导体材料碳化硅薄膜的异质外延工艺和反应机理进行了讨论,针对实验使用常压水平卧式反应室,分析了生长过程中气流流速分布、反应室内温度分布以及反应气体浓度分布,指出"汽相结晶"过程对薄膜生长区Si/C比例有很大影响,从而影响了碳化硅薄膜的生长速率,在SiC薄膜的生长过程中,对Si/C原子比例的控制一直是影响薄膜表面形貌和膜层掺杂浓度的重要因素.这很好地解释了薄膜生长过程中出现的异常现象.
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