利用金属有机化学气相沉积( MOCVD)技术 , 采用一种称为低温钝化的新生长方法成功地生 长出多层 InGaN/GaN量子点.这种方法是对 GaN表面进行钝化并在低温下生长 ,从而增加表面吸 附原子的迁移势垒.采用原子力显微镜清楚地观察到该方法生长的样品中岛状的量子点.从量子点 样品的 I- V特性曲线观察到了共振隧穿引起的负阻效应,其中的锯齿状峰形归因于零维量子点的 共振隧穿.
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