实验研究了氢、氧复合注入对注氧隔离技术制备 SOI(Silicon On Insulator)材料埋层结构的影 响.用截面透射电子显微镜和二次离子质谱技术分析了退火前后材料的微结构变化.研究表明, 氢离子的注入有利于注氧隔离制备的 SOI材料埋层的增宽.进一步的结果表明,室温氢离子注入 导致的增宽效应比高温注入明显.
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