研究了 PIN结构 GaInAsSb 红外探测器的暗电流特性,建立了器件的 PSPICE模型.模拟结果 与实际测试结果基本符合.计算结果表明,器件表面和内部的缺馅及表面复合电流对器件的反向 特性起主要作用 ,当反向偏压大于 0.35V,缺陷引起的隧穿电流对器件暗电流起主要作用.
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