采用 LaNiO3陶瓷靶和射频磁控溅射技术在 350℃的 K9玻璃衬底上制备出了具有较好( 100) 择优取向的 LaNiO3薄膜.通过对不同厚度薄膜的光学、电学以及薄膜结构等物理特性的测试分析, 发现薄膜厚度小于 100nm时为非晶结构,厚度大于 150nm后出现了具有( 100)择优取向的 LaNiO3 相.非晶结构的 LaNiO3具有较高的面电阻和高的光学透射率,而晶化的 LaNiO3薄膜具有类似于金 属的导电能力和光学特性.薄膜的生长动力学和导电分析结果认为薄膜生长的初期会形成一个非 晶过渡层.
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