利用等离子体化学气相沉积( PECVD)技术 ,采用不同的沉积条件 (20～ 180℃的基板温度范 围和 10～ 30W的射频功率 )制备了氮化硅薄膜,研究了沉积条件对氮化硅薄膜性质和防水性能的 影响.实验发现随着基板温度的增加 ,氮化硅薄膜的密度、折射率和 Si/N比相应增加 ,而沉积速 率和 H含量相应减少 ;随着射频功率的增加 ,氮化硅薄膜的沉积速率、密度、折射率和 Si/N比相 应增加 ,而 H含量相应减少.水汽渗透实验发现即使基板温度降低为 50℃,所沉积的氮化硅薄膜 仍然具有良好的防水性能.实验结果表明低温氮化硅薄膜可以有效地应用于有机发光器件( OLED) 的封装.
参考文献
| [1] | Lin H.;Chen X.;Wang XH.;Sheng M.;Stubhan F.;Merkel KH.;Wilde J.;Xu LQ. .Moisture-resistant properties of SiNx films prepared by PECVD[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1998(1/2):71-76. |
| [2] | Tang C W;Slyke Van S A .Organic electroluminescent diodes[J].Applied Physics Letters,1987,51:913. |
| [3] | Aziz H.;Xie S.;Hor AM.;Hu NX.;Tripp C.;Xu G.;Popovic Z. .Humidity-induced crystallization of tris (8-hydroxyquinoline) aluminum layers in organic light-emitting devices[J].Applied physics letters,1998(7):756-758. |
| [4] | Lim S F;Ke L;Wang W et al.Correlation between darkspot growth and pinhole size in organic light-mitting diodes[J].Applied Physics Letters,2001,78(15):2116. |
| [5] | Sheats J R;Antoniadis H;Hueschen M et al.Organicelectroluminescent devices[J].Science,1996,273:884. |
| [6] | Do L;Han E;Yamamoto N et al.[J].Molecular Crystals and Liquid Crystals,1996,280:373. |
| [7] | Lanford W A;Rand M J .The hydrogen content of plasma-deposited silicon nitride[J].Journal of Applied Physics,1978,49(04):2473. |
| [8] | Sinha A K;Levistein H J;Smith T E et al.Reactive plasma deposited Si- films for MOS-SI passivation[J].Journal of the Electrochemical Society,1978,125:601. |
| [9] | Blaauw C .Preparation and characterization of plasma-deposited silicon nitride[J].Journal of the Electrochemical Society,1984,131(05):1114. |
| [10] | Sinha A K;Lugujjo E .Lorentz-orenz correlation for reactively plasma deposited SiN films[J].Applied Physics Letters,1978,32:245. |
| [11] | Claassen W A P;Valkenburg W G J N;Habraken F H P M et al.Characterization of plasma silicon nitride layers[J].Journal of the Electrochemical Society,1983,130(12):2419. |
| [12] | Dun H;Pan P;White F R et al.Mechanisms of plasma-nhanced silicon nitride deposition using SiH4/N2 mixture[J].Journal of the Electrochemical Society,1981,128(07):1555. |
| [13] | Kern W;Rosler R S .Advances in deposition processes forpassivation films[J].Journal of Vacuum Science and Technology,1977,14:1082. |
| [14] | Burrows P E;Bulovic V;Forrest S R et al.Reliabilityand degradation of organic light emitting devices[J].Applied Physics Letters,1994,65(23):2922. |
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