在较低的衬底温度(260 0C)和不同氧分压下,采用射频溅射在(111)Si衬底上制备出了具有(100)择优取向的 LaNiO3薄膜. SEM分析表明薄膜具有光滑连续的表面和均匀的晶粒尺寸. I-V特性表明薄膜均具有金属导电性,且随着氧分压的增加,电阻率逐步降低并达到一个稳定值 10Ω@μ m.实验结果同时表明,随着氧含量的增加,Ni、 La含量比单调增大,并且当溅射气氛中的氧气分压在 20%～30%范围时,Ni、 La含量比为 1:1而且比较稳定.当氧气分压为30%时,薄膜的晶面间距达到最小值.制备 LaNiO3薄膜的最佳氧气分压应该控制在 30%左右.
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