计算模拟了半导体材料 CdZnTe垂直布里奇曼法(CdZnTe-VBM)单晶体生长过程,分析了 炉膛温度梯度和坩埚移动速率对结晶界面形态和晶体内组份偏析的影响.计算结果表明炉膛温 度梯度和生长速率的变化明显影响固-液界面前沿对流场的形态和强度.界面凹陷深度随着炉 膛温度梯度的增加和生长速率减小而减小.炉膛温度梯度的增加和生长速率的减小虽然均能有 效的减小径向偏析,但却增加轴向偏析,减小轴向等浓度区的长度.
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