测试了采用 PECVD生长的氢化纳米硅(nc-Si:H)薄膜的内应力.利用 XRD、 Raman、AFM、HRTEM研究了nc-Si:H薄膜的微结构,用全场薄膜应力测试仪测量了 nc-Si:H薄膜的内应力.结果表明: nc-Si:H薄膜的内应力与薄膜的微结构密切相关,强烈依赖于制备工艺.压应力随掺杂浓度的提高而增加;在一定功率密度范围内掺磷 nc-Si:H薄膜的压应力随功率密度增加而减少,并过渡为张应力;在 373-523K之间,掺硼 nc-Si:H薄膜的压应力随衬底温度升高而增加;nc-Si:H薄膜的压应力随氢气对硅烷稀释比的变化而变化.
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