一维,二维和三维Si基纳米线的制备

功能材料与器件学报 , 2003, 9(3): 291-294. doi: 10.3969/j.issn.1007-4252.2003.03.011

一维,二维和三维Si基纳米线的制备

胡卫兵 ^1, , 史伯安 ^2, , 但悠梦 ^3, , 谭志斗 ^4, , 吴少尉 ^5, , 朱艳秋 ^6, , 徐文光 ^7,

1.湖北民族学院化工系,恩施,445000

2.湖北民族学院化工系,恩施,445000

3.湖北民族学院化工系,恩施,445000

4.湖北民族学院化工系,恩施,445000

5.湖北民族学院化工系,恩施,445000

6.School of Chemistry,Physics and Environmental Science,University of Sussex,Brighton BN1 9QJ,UK

7.School of Chemistry,Physics and Environmental Science,University of Sussex,Brighton BN1 9QJ,UK

关键词：一维 , 二维 , 三维 , Si基纳米线 , 制备

Preparation of one dimension,two dimension and three dimension Si-based nanowires

在 Ar气氛中,SiC粉末分别在 Fe、 Co、 Fe:Co(1:1)的催化下,经一步反应制备了一维、二维和三维 Si基纳米线. SEM、 HRTEM、 EDX分析表明一维线状和二维网状 Si基纳米线由 C、 Si、 O组成,存在两类纳米线,一类是 SiOx包裹的 Si纳米线;另一类是 SiOx包裹的 SiC纳米线.三维Si基纳米线组成象花一样的结构,仅由 SiOx组成. SiOx和 Si是无定形结构,SiC是β-SiC单晶.

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