制备了大尺寸 AlGaInP/GaAs SHBT和 DHBT,对其直流特性进行了测试,并分析了 AlGaInP/GaAs单异质结晶体管(SHBT)和双异质结晶体管(DHBT)的直流特性差异,深入研究了影响 AlGaInP/GaAs HBT开启电压(Voffset)的各个因素.结果表明: AlGaInP/GaAs HBT开启电压与外加基极电流密切相关,采用宽发射区可大大降低器件的开启电压.
参考文献
| [1] | 严北平,张鹤鸣,戴显英.高功率密度自对准结构AlGaAs/GaAs 异质结双极晶体管[J].半导体学报,2001(02):247-250. |
| [2] | Bayraktaroglu B.;Barrette J. .Very high-power-density CW operation of GaAs/AlGaAs microwave heterojunction bipolar transistors[J].IEEE Electron Device Letters,1993(10):493-495. |
| [3] | Asbeck P M;Miller D L;Peterson W C et al.[J].IEEE Transactions on Electron Devices,1982,EDL-3:366. |
| [4] | Nobury D A.GaAs heterojunction biopolar transistor RF IC for wireless applications[A].MANTECH,1997:1. |
| [5] | Bayrakteroglo B.GaAs HBT's for microwave integrated circuits[J].Proceedings of the IEEE,1993:1762. |
| [6] | Tanaka S.;Amamiya Y. .Design considerations for millimeter-wave power HBTs based on gain performance analysis[J].IEEE Transactions on Electron Devices,1998(1):36-44. |
| [7] | Yow H K;Houston P A;Sidney C M et al.High-temperature DC characteristics of AlGaInP/GaAs HBT's grown by MOVPE[J].IEEE Transactions on Electron Devices,1996,43:2. |
| [8] | 吴杰,夏冠群,束为民,顾伟东,张兴宏.高温Al0.3Gao.22In0.48P/GaAs HBT电流增益的计算分析[J].半导体学报,2000(01):56-63. |
| [9] | 顾伟东,夏冠群,冯先根,吴强,P.A.Houston.AlGaInP/GaAs HBT发射结空间电荷区复合电流的研究[J].半导体学报,1997(10):748. |
| [10] | Beneking H;Su L M .Double heterojunction NpN GaAlAs/ GaAs bipolar transistor[J].Electronics Letters,1982,18:25. |
| [11] | Dubon C;Azonlay R;Pesronsseaus P.International Electron Device Meeting Technical Digest[C].,1983:689. |
| [12] | Su S L;Tejayadi O;Drrummond T J et al.Double heterojunction AlGaAs/GaAs bipolar transistors(DHBTs) by MBE with a current gain of 1650[J].IEEE Electron Device Letters,1983,EDL-4:130. |
| [13] | Mazhari B;Gao G B;Morkoc H .Collector-emitter offset voltage in heterojunction bipolar transistors[J].Solid-State Electronics,1991,34(02):315. |
| [14] | Chand N;Fisher R;Morkoc H .Collector-emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors[J].Applied Physics Letters,1985,47(03):313. |
| [15] | Won T.;Iyer S. .Collector offset voltage of heterojunction bipolar transistors grown by molecular beam epitaxy[J].IEEE Electron Device Letters,1989(6):274-276. |
| [16] | Lee S C;Kau J N;Lin H H .Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistor[J].Applied Physics Letters,1984,45(10):1114. |
| [17] | Hayes J R;Gossard A C;Wiegmann W .Collector/emitter offset voltage in Double-heterojunction bipolar transistors[J].Electronics Letters,1984,20(19):6. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%