用磁控溅射系统和快速合金化法制备了Au/Ti/W/Ti多层金属和n-GaAs材料的欧姆接触,用传输线法对其比接触电阻进行了测试,并利用俄歇电子能谱(AES)和X射线衍射图谱(XRD)对接触的微观结构进行了研究.结果表明该接触在700℃时比接触电阻为1.5×10-4Ω@cm2,快速合金化后呈现欧姆特性可能与接触界面处生成的TiAs相有关.
参考文献
| [1] | Murakami M .Development of ohmic contact materials for GaAs integrated circuits[J].Materials Science and Engineering R:Reports,1990,5:273-317. |
| [2] | Tanahashi K;Takata H J;Otuki A et al.Thermally stable non- gold ohmic contacts to n- typy GaAs. I. NiGe con- tact metal[J].Journal of Applied Physics,1992,72:4183-4190. |
| [3] | Masanori Murakami .Development of refractory ohmic contact materials for gallium arsenide compound semiconductors[J].Science and technology of advanced materials,2002(1):1-27. |
| [4] | Rideout V L .A review of the theory and technology for ohmic contacts to group III- V compound semiconductors[J].Solid-State Electronics,1975,18:541-550. |
| [5] | Shen T C;Gao G B;Morkoc H.Recent development in ohmic contacts for III- V compound semiconductors[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1992(10):2113-2132. |
| [6] | Kim H J;Murakami M;Price W H et al.Thermally stable ohmic contacts to n- type GaAs. VI InW contact metal[J].Journal of Applied Physics,1990,67(09):4183-4189. |
| [7] | Uchibori C J;Okunishi M;ku T et al.Formation mechanism of InxGa1- xAs ohmic contacts to n- type GaAs prepared by radio frequency sputtering[J].Journal of Electronic Materials,1994,23:983-989. |
| [8] | Murakami M;Shih Y C;Price W H et al.Thermally stable ohmic contacts to n- type GaAs. III. GeInW and NiInW contact metals[J].Journal of Applied Physics,1988,64:1974-1982. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%