电感耦合等离子体刻蚀InP端面的掩膜特性研究

功能材料与器件学报 , 2003, 9(4): 432-436. doi: 10.3969/j.issn.1007-4252.2003.04.014

电感耦合等离子体刻蚀InP端面的掩膜特性研究

王健 ^1, , 熊兵 ^2, , 孙长征 ^3, , 郝智彪 ^4, , 罗毅 ^5,

1.集成光电子国家重点实验室,清华大学电子工程系,北京,100084

2.集成光电子国家重点实验室,清华大学电子工程系,北京,100084

3.集成光电子国家重点实验室,清华大学电子工程系,北京,100084

4.集成光电子国家重点实验室,清华大学电子工程系,北京,100084

5.集成光电子国家重点实验室,清华大学电子工程系,北京,100084

基金项目: 国家高技术研究发展计划(863计划)(2001AA312190,2002AA31119Z) 国家自然科学基金(69896260-01) 国家重点基础研究发展计划(973计划)(TG2000036601)

关键词：干法刻蚀 , 掩膜 , ICP , InP , 刻蚀端面

Effects of mask characteristics on InP etched- facets by using inductively coupled plasma dry etching

深入研究了掩膜制作工艺对电感耦合等离子体刻蚀的InP端面的影响.首先比较了光刻胶、SiO2和Si3N4三种材料的掩膜特性,发现掩膜图形的致密性、侧壁粗糙度和垂直度等对刻蚀效果具有至关重要的影响.然后通过优化SF6等离子体刻蚀Si3N4的条件,得到了边缘平整且侧壁垂直的掩膜图形.利用这一掩膜制作技术,获得了深度达7μm的光滑垂直的InP刻蚀端面,选择比达15:1.

参考文献

[1]	Whaley R D;Gopalan B;Degenais M .High quality dry etched InP semiconductor laser facets and characterization using atomic force microscopy[J].LEOS,97:11.
[2]	Saito H;Noguchi Y .GaInAsP/InP Lasers with Mono- lithically Integrated Monitoring Photodiodes Fabricated by Inclined Reactive Ion Etching[J].Electronics Letters,1989,25:719.
[3]	Shiba T;Funaba S;Nakayama T.High Per- formance Laser Diode Integrated with Monitoring Photodiode (LD+ PD) Fabricated with the Precisely Controlled Dry Etching Technique[J].ECOC'96 ThD 3 6
[4]	Ojha S M;Clements S J.Etching of low loss mirrors for photonic ICs[J].Indium Phosphide and Related Materials,1993:524.
[5]	Tsang H.K.;Mak Mark W.K.;Chan L.Y.;Soole J.B.D.;Youtsey C.;Adesida I. .Etched cavity InGaAsP/InP waveguide Fabry-Perot filter tunable by current injection[J].Journal of Lightwave Technology: A Joint IEEE/OSA Publication,1999(10):1890-1895.
[6]	Marcuse D. .Reflection loss of laser mode from tilted end mirror[J].Journal of Lightwave Technology: A Joint IEEE/OSA Publication,1989(2):336-339.
[7]	Matsutani A;Ohtsuki H;Koyama F et al.Plasma Diagnostics in Inductively Coupled Plasma Etching Using Cl2/Xe[J].Japanese Journal of Applied Physics,1999,38(07):4260.
[8]	Diniz J A;Swart J W;Jung K B et al.Inductively Coupled Plasma Etching of In- Based Compound Semi- conductors in CH4/H2/Ar[J].Solid-State Electronics,1998,42(01):1947.
[9]	Maeda T.;Shul R.J.;Han J.;Hong J.;Lambers E.S.;Pearton S.J.;Abernathy C.R.;Hobson W.S.;Lee J.W. .Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries. II. InP, InGaAs, InGaAsP, InAs and AlInAs[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1999(1):183-190.
[10]	Matsutani A;Koyama F;Iga K .Low bias voltage dry etching of InP by inductively coupled plasma (ICP) using SiCl4/Ar[J].Japanese Journal of Applied Physics,1998,37:293.
[11]	Sun C Z;Zhou J B;Xiong B.Novel Etching Technology of InP by Inductively Coupled Plasma[J].URSI GA,2002:D4.

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电感耦合等离子体刻蚀InP端面的掩膜特性研究

Effects of mask characteristics on InP etched- facets by using inductively coupled plasma dry etching

参考文献