一种新型低阻SOI P-LDMOS研究

功能材料与器件学报 , 2004, 10(1): 67-70. doi: 10.3969/j.issn.1007-4252.2004.01.015

一种新型低阻SOI P-LDMOS研究

孙智林 ^1, , 孙伟锋 ^2, , 易扬波 ^3, , 吴建辉 ^4,

1.东南大学,国家专用集成电路系统工程研究中心,南京,210096

2.东南大学,国家专用集成电路系统工程研究中心,南京,210096

3.东南大学,国家专用集成电路系统工程研究中心,南京,210096

4.东南大学,国家专用集成电路系统工程研究中心,南京,210096

基金项目: 国家高技术研究发展计划(863计划)(2002AA1Z1550)

关键词： LDMOS , 导通电阻 , 表面注入 , SOI

Research on a novel SOI P-LDMOS transistor with low on-resistance

提出了一种新型SOI P-LDMOS器件,其大部分漂移区不覆盖场氧,从而避免了因生长场氧的高温过程而引起的硼杂质分凝效应,并在制备场氧、栅氧之后进行漂移区表面注入,由于注入后没有长时间的高温过程,进一步提高了漂移区表面的掺杂浓度.模拟结果表明新型P-LDMOS性能得到明显改善,与传统P-LDMOS相比开态导通电阻降低了24.7%,击穿电压提高了17.3%,饱和电流提高了26.7%.

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材料期刊网

一种新型低阻SOI P-LDMOS研究

Research on a novel SOI P-LDMOS transistor with low on-resistance

参考文献