欢迎登录材料期刊网

材料期刊网

高级检索

采用反应射频(RF)磁控溅射法在n型(100)单晶Si基片上沉积了ZrO2薄膜,研究了氧分压与ZrO2薄膜的表面粗糙度和沉积速率、SiO2中间界层的厚度以及ZrO2薄膜的折射率之间关系.结果表明:随着氧分压增高,薄膜的沉积速率降低,表面粗糙度线性地增加;在低的氧分压情况下,Si基片表面的本征SiO2层的厚度增加幅度较小,在高的氧分压情况下,Si基片表面的本征SiO2层的厚度有较大幅度地增加;在O2/Ar混和气氛下,溅射沉积的ZrO2薄膜的折射率受氧分压的影响不显著,而在纯氧气气氛环境下,ZrO2薄膜的折射率明显偏低,薄膜的致密性变差.

参考文献

[1] 干福熹;王阳元;肖定全.信息材料[M].天津:天津大学出版社,2000:34.
[2] Jin Cai;Chih -Tang Sah .Gate tunneling currents in ultrathin oxide MOS transistors[J].Journal of Applied Physics,2001,89(10):2272-2285.
[3] Wilk GD.;Anthony JM.;Wallace RM. .High-kappa gate dielectrics: Current status and materials properties considerations [Review][J].Journal of Applied Physics,2001(10):5243-5275.
[4] Kawamoto A;Cho K;Dutton R.[J].Journal of Computer Aided Materials Design,2002(08):39-57.
[5] Maria J P;Wiccakasana D;Kingon A I et al.High temperature stability lanthanum and zirconia- based gate dielectrics[J].Journal of Applied Physics,2001,90(07):3476-3482.
[6] M. Copel;M. Gribelyuk;E. Gusev .Structure and stability of ultrathin zirconium oxide layers on Si(001)[J].Applied physics letters,2000(4):436-438.
[7] Miyazaki S;Narasaki M;Qgasawara M.Characterization of ultra zircomiun oxide films on silicon using photoelectron spectroscopy-[J].Microelectronic Engineering,2001(59):373-378.
[8] 何乐年,徐进,王德苗.反应RF磁控溅射法制备非晶氧化硅薄膜及其特性研究[J].真空,2001(03):16-19.
[9] 赵登涛,朱炎,狄国庆.反应RF磁控溅射法制备氧化铝薄膜及其介电损耗[J].真空科学与技术学报,2000(04):300.
[10] Woollam J A.Ellipsometry, Variable Angle Spectroscopic in Wiley Encyclopedia of Electrical and Electronics Engineering[M].New York: Wiley Press,2000:109-117.
[11] Yong Jai Cho;N. V. Nguyen;C. A. Richter;J. R. Ehrstein;Byoung Hun Lee;Jack C. Lee .Spectroscopic ellipsometry characterization of high-k dielectric HfO_(2) thin films and the high-temperature annealing effects on their optical properties[J].Applied physics letters,2002(7):1249-1251.
[12] Muller D A;Sorsch T;Moccio S et al.The electronic structure at the atomic scale of ultrathin gate oxides[J].Nature,1999,399:758.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%