利用离子注入方法制备了掺Er富硅氧化硅材料,用XRD,TEM方法研究材料微观结构,并测量了样品的光致发光(PL),研究了发光强度随测量温度的变化.试验表明:在1173K以上退火,注入硅集聚,形成φ(2-4)nm的纳米晶硅(nc-Si),纳米晶硅外面包裹非晶硅(a-Si),注入的Er离子分布在非晶硅中.通过非晶硅与硅纳米晶相耦合,非晶硅吸收部分硅纳米晶对Er的激发能量,降低了Er的激发效率;在T> 150K时,激发态Er与非晶硅间的能量背迁移降低了Er的发光效率.
参考文献
[1] | Polman A. .ERBIUM IMPLANTED THIN FILM PHOTONIC MATERIALS [Review][J].Journal of Applied Physics,1997(1):1-39. |
[2] | Coffa S;Franzo G;Polman A .Temperature dependence and quenching processes of the intra - 4f luminescence of Er in crystalline Si[J].Physical Review B,1994,49:16313-16320. |
[3] | Namavar F;Lu F;Clive H et al.Visible and infrared(1. 54μm) emission From Er- implanted porous Si for photonic applications[J].Journal of Electronic Materials,1996,25:43-49. |
[4] | Lopez H A;Fanchet P M;Chen S et al.Infrared LEDs and Microcavities based on erbium -doped silicon nanocomposites[J].Materials Science And Engineering B:Solld-State Materials For Advanced Technology,2001,81:91-96. |
[5] | Stepikhova M;Jantsch W;Kocher G;Palmetshofer L;Schoisswohl M;vonBardeleben HJ;UNIV PARIS 07 F-75251 PARIS 05 FRANCE.;NIZHNI NOVGOROD UNIV NIZHNII NOVGOROD RUSSIA. .Direct excitation spectroscopy of Er centers in porous silicon[J].Applied physics letters,1997(20):2975-2977. |
[6] | Brongersma M L;Polman A .Tuning the emission avelength of Si nanocrystalls in SiO2 by oxidation[J].Applied Physics Letters,1998,72:2577-2580. |
[7] | P. G. Kik;M. L. Brongersma;A. Polman .Strong exciton-erbium coupling in Si nanocrystal-doped SiO_(2)[J].Applied physics letters,2000(17):2325-2327. |
[8] | Bruesch P;Stockmeier Th;Stucki F .Physical properties of semi -insulating polycrystalline silicon[J].Journal of Applied Physics,1993,73:7677-7689. |
[9] | Thomas D. Chen;Marlene Platero;Michal Opher-Lipson;Jorg Palm;Jurgen Michel;Lionel C. Kimerling .The temperature dependence of radiative and nonradiative processes at Er-O centers in Si[J].Physica, B. Condensed Matter,1999(0):322-325. |
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