用快速凝固和热压烧结方法制备了三种不同成分的P型高锰硅(HMS)材料MnSi1.75-x(x=0,0.02,0.04).微观组织结构分析表明,在Mn4Si7半导体相基体中,存在小区域平行分布的薄片状MnSi金属相,其形成机制是在快速凝固时的准定向凝固.随高锰硅中Si含量的增加,试样的电导率下降,Seebeck系数上升.分析表明,影响高锰硅性能的主要因素在400℃以下是载流子散射,在约500℃以上是电子激发.实验得到的热电功率因子最高值为1.3×10-3Wm-1K-1(570℃).
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