HgCdTe光伏探测器的钝化介质膜应力常常限制其低温性能,利用高分辨率多重晶X射线衍射仪中的三重晶衍射技术和倒易空间作图对钝化介质膜应力进行了表征,发现在较高溅射能量下沉积的钝化膜,由于应力的作用,HgCdTe晶片出现弯曲,并有大量镶嵌结构,而在较低的溅射能量下和热蒸发下沉积的钝化膜,晶面未出现明显弯曲,可获得较低应力的钝化介质层.
参考文献
| [1] | Chen M C;List R S;Chandra D et al.Key performance limiting defects in P - on - N HgCdTe LPE heterojunction infrared photodiodes[J].Journal of Electronic Materials,1996,25(08):1375-1382. |
| [2] | WIJEWARNASURIYA P.S.;ZANDIAN M.;YOUNG D.B. .Microscopic Defects on MBE Grown LWIR Hg_(1-x)Cd_xTe Material and their Impact on Device Performance[J].Journal of Electronic Materials,1999(6):649-653. |
| [3] | Bhan R K;Koul S K;Basu P K.Analysis of the Idealith Factor in Surface Leaky HgCdTe Photodiodes for the Long wavelength Infrared region[J].Semiconductor Science and Technology,1999(12):448-454. |
| [4] | Sang Wenbin;Ju Jianhua;Shi Weiming.Comparison of Physical Passivation of Hg1-xCdxTe[J].Journal of Crystal Growth,2000(214/215):256-268. |
| [5] | 米侃,赛小锋,侯洵.研究与玻璃粘接的GaAs/GaAlAs外延层晶体质量的X射线衍射方法[J].半导体学报,1999(02):152-156. |
| [6] | Fewster P F.X -ray Scattering from Semiconductors[M].London:Imperial College Press,2000:192-196. |
| [7] | 赵永军,王民娟,杨拥军,梁春广.PECVD SiNx薄膜应力的研究[J].半导体学报,1999(03):183. |
| [8] | Ni W X;Lyytovich K;Alami J.X-ray reciporcal space mapping studies of strain relaxtion in thin SiGe layers (≤100nm) using a low temperature growth step[J].Journal of Crystal Growth,2001(227/228):750-760. |
| [9] | 杨传铮.薄膜、多层膜和一维超点阵材料的X射线分析新进展[J].物理学进展,1999(02):183. |
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