用多晶薄膜晶粒-晶界两相结构模型,考虑晶格畸变和载流子对晶界势垒区的隧穿机制,在10～100℃范围内,模拟了离子束增强沉积(IBED)VO2多晶薄膜的相变.模拟结果显示,由于晶粒中间隙位置氩的存在,使VO2晶格畸变,导致了薄膜中部分晶粒的相变温度降低,使IBED VO2薄膜在48℃开始由半导体相向金属相转变.
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