气态源分子束外延生长重碳掺杂p型InGaAs研究

功能材料与器件学报 , 2004, 10(4): 423-412. doi: 10.3969/j.issn.1007-4252.2004.04.005

气态源分子束外延生长重碳掺杂p型InGaAs研究

徐安怀 ^1, , 陈晓杰 ^2, , 齐鸣 ^3, , 朱福英 ^4,

1.中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海,200050;中国科学院研究生院,北京,100039

2.中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海,200050

3.中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海,200050

4.中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海,200050

基金项目: 国家重点基础研究发展计划(973计划)(G20000683- 04,2002CB311902)

关键词：分子束外延 , 碳掺杂 , 四溴化碳 , InGaAs , 异质结双极晶体管

Study on ultrahigh carbon- doped p- type InGaAs grown by gas source molecular beam epitaxy

采用气态源分子束外延( GSMBE)技术,以四溴化碳( CBr4)作为碳杂质源,系统研究了 InP衬底上碳掺杂 p型 InGaAs材料的外延生长及其特性,在 AsH3压力 5.33× 104Pa,生长温度 500℃条件下获得了空穴浓度高达 1× 1020/cm3、室温迁移率为 45cm2/Vs的重碳掺杂 p型 In0.53Ga0.47As材料. 研究了 CBr4和 AsH3束流强度以及生长温度等生长条件对碳掺杂 InGaAs外延层组份、空穴浓度和迁移率的影响,并对不同生长条件下的氢钝化效应进行了分析.

参考文献

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