采用氧氮共注的方法制备了氮氧共注隔离 SOI (SIMON) 圆片,对制备的样品进行了二次离 子质谱和透射电镜分析,并对埋层结构与抗辐射性能的机理进行了分析.结果表明,注氮剂量较低 时埋层质量较好.机理分析结果表明,圆片的抗辐照性能与埋层质量之间存在很密切的关系,埋层 的绝缘性能是影响器件抗辐射效应的关键因素.
参考文献
| [1] | Auberton-Herve A J.SOI Materials to System[A].,1996:3-10. |
| [2] | Wong H- S P;FrankDJ;Solomon P M .1998 Device design considerations for double-gate,ground-plane,and single-gated ultra-thin SOI MOSFET's at the 25 nm channel length generation IEDM tech Dig 407[Z]. |
| [3] | 郭红霞;陈雨生;周辉.SOI器件电离辐照效应研究[A].上海,2002 |
| [4] | Li Ying;Min Guofu;John D Gessler et al.Anomalous radiation effects in fully- depleted SOI MOSFETs fabricated on SIMOX[DB/OL].http://nepp.nasa.gov/DocU ploads/599195C1- 82BA- 43DD- BCBC5E18A5F74E- E1/tns01_soi.pdf |
| [5] | A. Matsumura;I. Hamaguchi;K. Kawamura;T. Sasaki;S. Takayama;Y. Nagatake .Technological innovation in low-dose SIMOX wafers fabricated by an internal thermal oxidation (ITOX) process[J].Microelectronic engineering,2003(1/4):400-414. |
| [6] | Sung-Chul Lee;Raparla A. .Total dose effects in composite nitride-oxide films[J].IEEE Transactions on Nuclear Science,2000(6):2297-2304. |
| [7] | 刘忠立;李宁;刘相华.氧氮注入 SOI结构的抗总剂量电离辐射特性[A].上海,2002 |
| [8] | 易万兵;刘相华;刘忠立.氧氮复合注入形成 SOIM 材料及其抗总剂量辐照的研究[A].上海,2002 |
| [9] | 易万兵 .复合离子注入形成SOI结构及其结构和性能的研究[D].中国科学院上海微系统与信息技术研究所,2003. |
| [10] | W B Yi;E X Zhang;M Chen;N Li;G Q Zhang;Z L Liu;X Wang .Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing[J].Semiconductor Science and Technology,2004(5):571-573. |
| [11] | Lawrence R.K.;Mrstik B.J. .Radiation induced charge in SIMOX buried oxides: lack of thickness dependence at low applied fields[J].IEEE Transactions on Nuclear Science,1997(6):2095-2100. |
| [12] | Nejim A;Marsh C D;Giles L F et al.An investigation of the role of the time averaged ion beam current density upon the defect densities in thin film SIMOX[J].Nuclear Instruments and Methods in Physics Research B:Beam Interaction with Materials and Atoms,1994,84(02):248-253. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%