研究了不同的干法刻蚀以及氧气等离子体处理条件对 AlGaN表面特性的影响.在合适的条 件下,氧气等离子体处理可以使 AlGaN表面发生氧化, 并使肖特基接触的反向漏电流降低两个数 量级,反向击穿电压也有显著提高.该方法简单易行,可应用于制备高性能的 AlGaN/GaN HEMT 器件.
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