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研究了不同的干法刻蚀以及氧气等离子体处理条件对 AlGaN表面特性的影响.在合适的条 件下,氧气等离子体处理可以使 AlGaN表面发生氧化, 并使肖特基接触的反向漏电流降低两个数 量级,反向击穿电压也有显著提高.该方法简单易行,可应用于制备高性能的 AlGaN/GaN HEMT 器件.

参考文献

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[2] E. J. Miller;X. Z. Dang;H. H. Wieder .Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor[J].Journal of Applied Physics,2000(11):8070-8073.
[3] Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing[J].Applied physics letters,2003(24):4301-4303.
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[5] X. Hu;A. Koudymov;G. Simin;J. Yang;M. Asif Khan;A. Tarakji;M. S. Shur;R. Gaska .Si_(3)N_(4)/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors[J].Applied physics letters,2001(17):2832-2834.
[6] Ootomo S;Hashizume T;Hasegawa H .A novel thin Al2O3 gate dielectric by ECR- plasma oxidation of Al for AlGaN/ GaN insulated gate heterostructure field- effect transistors[J].Physica Status Solidi,2002,189:90-94.
[7] 唐广,郝智彪,孙长征,罗毅.GaN基HEMT后部制作工艺的优化[C].中国有色金属学会第八届全国MOCVD学术会议论文集,2003:85-85.
[8] Tong Wu;Zhi- Biao Hao;Guang Tang et al.Dry etching characteristics of AlGaN/GaN heterostructures using in- ductively coupled H2/Cl2, Ar/Cl2 and BCl3/Cl2 plasmas[J].Japanese Journal of Applied Physics,2003,42:L257-L259.
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