采用气态源分子束外延(GSMBE)技术在InP(100)衬底上生长了InAsP/InGaAsP应变补偿量子阱为有源层和InP/InGaAsP分布布拉格反射镜(DBR)为上、下腔镜的垂直腔面发射激光器(VCSEL)结构.通过湿法刻蚀和聚酰亚胺隔离工艺制作出了1.3μm VCSEL,器件在室温下可连续单模激射,阈值电流约为4mA.实验测得的VCSEL结构反射光谱包括高反射带和腔模等参数与传递矩阵法拟合的反射光谱相符合;边发射电致发光谱的增益峰与腔模位置一致.
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