提出了包含射频有源和无源器件的SOI集成结构及工艺方案,在同一SIMOX衬底上制作了射频LDMOS、NMOS、电感、电容、电阻和变容管.核心的LDMOS、NMOS和电感器件均获得了优良的电学特性:0.25μm栅长的LDMOS截止频率和关态击穿电压分别为19.3 GHz和16.1 V;而0.25μm栅长的NMOS对应参数则为21.3 GHz和4.8 V;采用开发的局部介质增厚技术后,2 nH、5 nH、10 nH螺旋电感的最大品质因数分别达到了6.5、5.0、4.0,相对于不采用此技术的电感(最大品质因数分别为4.3、3.2、2.3),分别改善了77%,58%,49%.
The structures of SOI active and passive integrated devices for RF IC applications were proposed, as well as the simplified processes. SOI RF LDMOS, NMOS, inductors, capacitors, resistors and varactors were integrated in the same SIMOX substrate successfully, and key devices, including LDMOS, NMOS and inductors, show excellent performances, i.e. the cutoff frequency and off- state breakdown voltage of 0. 25μm gate length LDMOS are 19.3 GHz and 16. 1 V respectively; those of 0.25μm gate length NMOS are 21.3 GHz and 4.8 V respectively; for the 2 nH, 5 nH, 10 nH spiral inductors with the proposed technique of local - dielectric - thickening, the maximum quality factors are 6.5, 5.0, 4.0, compared with those of the inductors without this technique (4.3, 3.2, 2. 3),the improvements are 77%, 58%, 49% respectively.
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