从理论和实验上分析了双异质结In0.53Ga0.47As PIN光电探测器在不同的反向偏置电压下暗电流在甚宽温度范围内的温度特性.结果表明:在反向偏置低压与高压段,产生-复合电流与隧道电流(缺陷隧道电流与带带间隧道电流)分别占主导地位,并呈现出相应的温度特性.还从理论与实验两方面探讨了噪声对探测器R0A的影响,结果表明:在低温段,产生-复合噪声起主要作用,在高温段,俄歇复合噪声起主要作用.
参考文献
| [1] | Antoni Rogalski .Infrared detectors: status and trends[J].Progress in Quantum Electronics,2003(2/3):59-210. |
| [2] | Piotrowski J;Kaniewski J .Optimisation of InGaAs infrared photocoltaic detectors[J].IEE Proceedings-Optoelectronics,1999,146:173-176. |
| [3] | Trommer R;Albrecht H .Confirmation of tunneling current via traps by DLTS measurements in InGaAs photodiodes[J].Japanese Journal of Applied Physics,1983,22:L364-L366. |
| [4] | Ishimura E;Kimura T;Shiba Y et al.Dark current and diffusion length in InGaAs photodiodes grown on GaAs substrates[J].Applied Physics Letters,1990,56(07):644-646. |
| [5] | Tian YA.;Zhang BL.;Jin YX.;Jiang H.;Zhou TM. .Analysis of the R(0)A product and detectivity in a GaInAsSb infrared photovoltaic detector[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,1998(22):3291-3297. |
| [6] | Rogalski Antoni.Infrared photon detectors[M].Washington:SPIE optical engineering press,1995 |
| [7] | Ahrenkiel RK.;Johnston S.;Wanlass M.;Ellingson R. .Recombination lifetime of In0.53Ga0.47As as a function of doping density[J].Applied physics letters,1998(26):3470-3472. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%