采用Sol-gel方法在生长有LNO3的Si(100)衬底上制备了掺Mn的PbZr0.5Ti0.5O3铁电薄膜(PMZT).PMZT薄膜具有优良的铁电性.在外加电场下观察到了非对称剩余极化翻转行为.这种剩余极化的翻转不对称随着锰掺杂浓度的增加而变大,从而表明极化过程中产生的内建偏压电场是由Mn的掺杂引起的.当薄膜厚度保持不变时候,PMZT薄膜的剩余极化(Pr)和平均矫顽电场(Ec)随着锰掺杂浓度的增大而减小.在低频下,PMZT薄膜的介电常数随着锰的掺杂浓度的增加而减小.瞬时电流随着时间的呈指数衰减,最后到达饱和的稳态值.样品的漏电流密度随着电压的增加而近似地线性增加,显示出欧姆特性.在相同电压下,漏电流密度随着Mn掺杂浓度的增加而增加.
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