曲折状FeSiB/Cu/FeSiB三层膜结构应力阻抗效应研究

功能材料与器件学报 , 2005, 11(4): 419-422. doi: 10.3969/j.issn.1007-4252.2005.04.005

曲折状FeSiB/Cu/FeSiB三层膜结构应力阻抗效应研究

陈吉安 ^1, , 茅昕辉 ^2, , 赵晓昱 ^3, , 丁文 ^4, , 曹莹 ^5, , 周勇 ^6,

1.上海交通大学微纳科学技术研究院,薄膜与微细技术教育部重点实验室,微米/纳米加工技术国家级重点实验室,上海,200030

2.上海交通大学微纳科学技术研究院,薄膜与微细技术教育部重点实验室,微米/纳米加工技术国家级重点实验室,上海,200030

3.上海工程技术大学,汽车工程学院,上海,200336

4.上海交通大学微纳科学技术研究院,薄膜与微细技术教育部重点实验室,微米/纳米加工技术国家级重点实验室,上海,200030

5.上海交通大学微纳科学技术研究院,薄膜与微细技术教育部重点实验室,微米/纳米加工技术国家级重点实验室,上海,200030

6.上海交通大学微纳科学技术研究院,薄膜与微细技术教育部重点实验室,微米/纳米加工技术国家级重点实验室,上海,200030

基金项目: 中国科学院资助项目(50275096) 上海市纳米科技专项基金(0215nm104;0352nm014)

关键词：应力阻抗 , FeSiB/Cu/FeSiB三层膜 , 磁控溅射 , 曲折状

Stress-impedance effects of FeSiB/Cu/FeSiB trilayers with a meander structure

采用磁控溅射法在玻璃基底上制备了曲折状FeSiB/Cu/FeSiB三层膜结构,在1～40MHz范围内研究了FeSiB膜和Cu膜厚度对三层膜结构应力阻抗效应的影响.结果表明:高频下三层膜的应力阻抗效应随着其形变的增加近似线性增加,在自由端弯曲变形1mm、外加电场频率为25MHz时,应力阻抗效应达到-18.3%,在力敏传感器方面具有广阔的应用前景.

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