采用VHF-PECVD技术沉积硼掺杂的P型微晶硅薄膜材料,在硅烷浓度(SC)为0.8%,反应气压93Pa时,随等离子体功率的增加,材料的晶化率和电导率先增大,后减小;薄膜的透过率随功率的增大而增加.将获得的P型微晶硅薄膜应用在微晶硅薄膜太阳电池中,电池结构为glass/p-μc-Si:H/I-μc-Si:H/n-μc-Si:H/Al, 厚度约1μm,没有背反射电极的情况下,电池效率达到了7.32%(Voc＝0.520V,Jsc＝21.33mA/cm2,FF＝64.74%).
参考文献
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