提出一种氧化增强注氧隔离工艺,在退火前氧化得到SiO2层,再进行高温退火得到绝缘体上的硅锗材料.经X射线摇摆曲线和拉曼测试发现所制备的绝缘体上的SiGe材料锗含量没有发生损失,且应变弛豫完全.透射电镜和二次离子质谱分析结果显示样品多层结构清晰,埋氧层质量完好、平整度高、无不连续、无硅岛.研究表明,氧化增加工艺的引入是绝缘体上的硅锗材料锗质量提高的关键.
参考文献
| [1] | Lijuan Huang;Jack O. Chu;S. A. Goma;C. P. D'Emic;Steven J. Koester;Donald F. Canaperi;Patricia M. Mooney;S. A. Cordes;James L. Speidell;R. M. Anderson;H. -S. Philip Wong .Electron and hole mobility enhancement in strained SOI by wafer bonding[J].IEEE Transactions on Electron Devices,2002(9):1566-1571. |
| [2] | T. Mizuno;S. Takagi;N. Sugiyama;H. Satake;A. Kurobe;A. Toriumi .Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology[J].IEEE Electron Device Letters,2000(5):230-232. |
| [3] | Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure[J].Applied physics letters,2003(15):2452-2454. |
| [4] | Fukatsu S.;Saito T.;Shibata N.;Ishikawa Y. .SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen[J].Applied physics letters,1998(26):3485-3487. |
| [5] | Oberhuber R.;Vogl P.;Zandler G. .Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET's[J].Physical Review.B.Condensed Matter,1998(15):9941-9948. |
| [6] | T. Tezuka;N. Sugiyama;S. Takagi .Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction[J].Applied physics letters,2001(12):1798-1800. |
| [7] | Fatemi M;Stahlbush R E .X-ray rocking curve measurement of composition and strain in Si-Ge buffer layers grown on Si substrates[J].Applied Physics Letters,1991,58:825-827. |
| [8] | Tsang J C;Mooney P M;Dacol F et al.Measurements of alloy composition and strain in thin GexSi1-x layers[J].Applied Physics Letters,1994,75:8098-8108. |
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