采用剥离工艺制备了单元大小为10μm×18μm的CoNbZr/Co/Cu/Co和NiFe/Co/Cu/Co多层膜结构的3×3自旋阀单元阵列,并测试了自旋阀单元的静态和动态巨磁电阻特性.结果表明CoNbZr层对快速磁场变化具有良好的线性响应特性.与NiFe/Co/Cu/Co自旋阀单元相比,微米尺度的CoNbZr/Co/Cu/Co自旋阀单元具有更良好的自旋电子特性,可以应用到包括MRAM器件在内的自旋电子器件中.
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