Si衬底GaN基LED理想因子的研究

功能材料与器件学报 , 2006, 12(1): 45-48. doi: 10.3969/j.issn.1007-4252.2006.01.011

Si衬底GaN基LED理想因子的研究

刘卫华 ^1, , 李有群 ^2, , 方文卿 ^3, , 周毛兴 ^4, , 刘和初 ^5, , 莫春兰 ^6, , 王立 ^7, , 江风益 ^8,

1.南昌大学,教育部发光材料与器件工程研究中心,南昌,330047

2.南昌大学,教育部发光材料与器件工程研究中心,南昌,330047

3.南昌大学,教育部发光材料与器件工程研究中心,南昌,330047

4.南昌大学,教育部发光材料与器件工程研究中心,南昌,330047

5.南昌大学,教育部发光材料与器件工程研究中心,南昌,330047

6.南昌大学,教育部发光材料与器件工程研究中心,南昌,330047

7.南昌大学,教育部发光材料与器件工程研究中心,南昌,330047

8.南昌大学,教育部发光材料与器件工程研究中心,南昌,330047

基金项目: 电子信息产业发展基金国家科技攻关项目(2003AA302160)

关键词： Si衬底 , GaN , LED , 理想因子

Research on the ideality factor of GaN light -emitting diodes on Si substrate

首次报道Si衬底GaN LED的理想因子.通过GaN LEDI-V曲线与其外延膜结晶性能相比较,发现理想因子的大小与X射线双晶衍射摇摆曲线(102)面半峰宽有着对应关系:室温时Si衬底GaN LED的理想因子为6.6,对应着半峰宽707arcsec;理想因子为4.5时,对应半峰宽530arcsec.蓝宝石衬底GaN LED理想因子为3.0,其对应半峰宽401arcsec.硅衬底GaN LED理想因子大的原因可以归结为高缺陷密度所致,高缺陷密度使电流隧穿更容易进行.

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