用超高真空射频磁控溅射技术制备了高C轴取向的ZnO薄膜,用扫描电镜和X射线衍射仪分别研究了退火对ZnO薄膜形貌和内应力的影响.结果表明:适当温度退火后薄膜的形貌和内应力得到改善,通过增氧、缺陷原子的热激活和晶粒融合等可以有效地降低薄膜中由热效应、缺陷效应和粒子注入效应等引起的张应力,薄膜组织致密化并且柱状晶粒取向趋于一致.450℃退火的ZnO薄膜具有最低的张应力和最佳的结晶质量.
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