研究了采用Sn/Bi合金作为中间层的键合封装技术.通过电镀的方法在基片上形成Cr/Ni/Cu/Sn、芯片上形成Cr/Ni/Cu/Bi多金属层,在513K、150Pa的真空环境中进行共晶键合,键合过程不需使用助焊剂,避免了助焊剂对微器件的污染.实验表明:这种键合工艺具有较好的气密性,键合区合金层分布均匀,无缝隙、气泡等缺陷,键合强度较高,能够满足电子元器件和微机电系统(MEMS)可动部件低温气密性封装的要求.
参考文献
| [1] | 张丽华,李军,邵崇俭.MEMS封装中真空封口及真空度检测技术[J].微纳电子技术,2003(07):267-270. |
| [2] | Masayoshi Esashi;Susumu Sugiyama;Kyoichi Ikeda;Yuelin Wang;Haruzo Miyashita .Vacuum-sealed silicon micromachined pressure sensors[J].Proceedings of the IEEE,1998(8):1627-1639. |
| [3] | Timo Veijola;Heikki Kuisma;Juha Lahdenper .The influence of gas-surface interaction on gas-film damping in a silicon accelerometer[J].Sensors and Actuators, A. Physical,1998(1/3):83-92. |
| [4] | Ruan M;Shen J;Wheeler CB .Latching microelctromagnetic relays[J].Sensors and Actuators A-physical,2001,91:346-350. |
| [5] | Okamoto H;Massalski TB.Binary Alloy Phase Diagrams[A].Metals Park,OH,1990:796. |
| [6] | Se-young Jang;Kyung-wook paik .Pb-free bumping technology and UBM[J].Electronic Materials and Packaging,2001,11:121-128. |
| [7] | Liu CY;Tu KN;Sheng TT et al.Electron microscopy study of interfacial reaction between eutectic SnPb and Cu/Ni(Ⅴ)/Al thin film metallization[J].Journal of Applied Physics,2000,87:750-754. |
| [8] | Se-Young Jang;Kyung Wook Paik.Comparision of electroplated eutectic Sn/Bi and Pb/Sn solder bumps on various UBM systems[M].Las Vegas NV USA:Institute of Electrical and Electronics Engineers Inc Piscataway NJ USA,2000:64-68. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%