使用微波电子回旋共振等离子体化学气相沉积(ECR-CVD)方法室温生长了非晶氢化的氮化硅薄膜,通过改变前驱气体(SiH4+80%Ar和NH3)的流量比,研究了薄膜的生长速率、等离子体的发射光谱和薄膜的红外特性.结果表明:随着NH3流量的增加,氮化硅薄膜的生长速率呈下降趋势,这主要是由于等离子体中的气相前驱成分之一硅基团浓度的不断下降所导致的;随着NH3流量的增加,薄膜中键合了较多的具有较高电负性的N原子是Si-N和Si-H伸缩振动发生蓝移的主要原因.红外光谱的定量计算表明所制备的氮化硅薄膜具有相对较低的H浓度,约15%左右.文中对氮化硅薄膜的生长机制也进行了讨论.
参考文献
| [1] | Flewitt A J;Dyson A P;Robertson J et al.Low temperature growth of silicon nitride by electron cyclotron resonance plasma enhanced chemical vapor deposition[J].Thin Solid Films,2001,383(1-2):172-177. |
| [2] | Teasdale D;Senzaki Y;Robert H et al.LPCVD of Silicon Nitride from Dichlorosilane and Ammonia by Single Wafer Rapid Thermal Processing[J].Elecrochem Solid-state Lett,2001,4(05):F11. |
| [3] | Jeong J W;Rosenblum M D;Juris P et al.Hydrogenation of defects in edge-defined film-fed grown aluminum-enhanced plasma enhanced chemical vapor deposited silicon nitride multicrystalline silicon[J].Journal of Applied Physics,2000,87:7551. |
| [4] | Fengzhen Liu;Scott Ward;Lynn Gedvilas et al.Amorphous silicon nitride deposited by hot -wire chemical vapor deposition[J].Journal of Applied Physics,2004,96:2973. |
| [5] | Prado del A;Andres San E;Martil I et al.Influence of H on the composition and atomic concentrations of "N-rich"plasma deposited SiOxNyHz films[J].Journal of Applied Physics,2004,95:5373. |
| [6] | 辛煜,宁兆元,程珊华,陆新华,甘肇强,黄松.ECR-CVD法制备的a-C：F：H薄膜在 N2气氛中的热退火研究[J].物理学报,2002(02):439-443. |
| [7] | Zambom LD.;Mansano RD. .Silicon nitride deposited by inductively coupled plasma using dichlorosilane and ammonia[J].Vacuum,2003(4):439-444. |
| [8] | Lanford W A;Rand M J .The hydrogen content of plasmadeposited silicon nitride[J].Journal of Applied Physics,1978,49(04):2473-2477. |
| [9] | Paloura E C;Kuo Y;Braun W .On the effect of bonded hydrogen in the local microstructure of PECVD SiNx:H films[J].Physical Review B,1995,208-209:562-564. |
| [10] | Yin Z;Smith F W .Free-energy model for bonding in amorphous covalent alloys[J].Physical Review B,1991,43(05):4507-4510. |
| [11] | Martinez F L;Ruiz-Merio R;Prado del A et al.Bonding structure and hydrogen content in silicon nitride thin films deposited by electron cyclotron resonance plasma method[J].Thin Solid Films,2004,459:203-207. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%