提出了一个提高PDSOI nMOSFETs可靠性的方法,并且研究了这种器件的热载流子可靠性.这种方法是在制造器件中,进行背沟道注入时只注入背沟道一半的区域.应力试验结果表明这种新的器件和常规器件相比,展示了较低的热载流子退变.2D器件模拟表明在漏端降低的峰值电场有助于这种器件提高的热载流子可靠性.
A new way to improve the reliability of Partially Depleted SOI nMOSFETs was introduced and the hot carrier reliability of this new device was studied. This new way is to implant impurities into half of the back channel while performing back channel doping. The stress experimental results show that this new SOI nMOSFETs exhibits a lower hot carrier degradation in comparison with conventional SOI nMOSFETs. 2-D device simulations show that lowered peak electrical field near the drain contributes to the lower hot carrier degradation HBC SOI nMOSFETs compared with the conventional SOI nMOSFETs.
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